IEEE Electron Device Letters · 1988 · 295 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsNanoelectronicsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap Semiconductor DevicesCurrent GainGain EnhancementHeterojunction Bipolar TransistorsHeterojunction DevicesHeterojunctionsLow-temperature ProcessingMolecular Beam EpitaxySilicon Germanium Bipolar Transistor
The devices were fabricated using molecular-beam epitaxy (MBE), low-temperature processing, and germanium concentrations of 0, 6%, and 12%. The transistors demonstrate current gain, and show the expected increase in collector current as a result of reduced bandgap due to Ge incorporation in the base. For a 1000-AA base device containing 12% Ge, a six-times increase in collector current was measured at room temperature, while a 1000-times increase was observed to 90 K. The temperature dependence of the collector current of the Si/sub 0.88/Ge/sub 0.12/ base transistor is consistent with a bandgap shrinkage in the base of 50 meV. For the homojunction transistors, base widths as thin as 800 AA were grown, corresponding to a neutral base width of no more than 400 AA.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Measurement of the band gap of Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures
D. V. Lang, R. People, J. C. Bean et al. · Applied Physics Letters · 1985 · 311 citations
Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures
R. People, J. C. Bean, D. V. Lang et al. · Applied Physics Letters · 1984 · 302 citations