Subramanian S. Iyer

Heterojunction bipolar transistors using Si-Ge alloys

Subramanian S. Iyer, G.L. Patton, J.M.C. Stork et al. · IEEE Transactions on Electron Devices · 1989 · 397 citations

Engineering, Electrical Engineering, Materials Science +17

Growth and strain compensation effects in the ternary Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloy system

K. Eberl, Subramanian S. Iyer, Stefan Zollner et al. · Applied Physics Letters · 1992 · 315 citations

Engineering, Materials Engineering, Materials Science +17

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

G.L. Patton, Subramanian S. Iyer, S.L. Delage et al. · IEEE Electron Device Letters · 1988 · 295 citations

Engineering, Electrical Engineering, Materials Science +17

New approach to the growth of low dislocation relaxed SiGe material

Adrian R. Powell, Subramanian S. Iyer, F. K. LeGoues · Applied Physics Letters · 1994 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Heterogeneous Integration for Performance and Scaling

Subramanian S. Iyer · IEEE Transactions on Components Packaging and Manufacturing Technology · 2016 · 171 citations

Engineering, Computer Engineering, Electrical Engineering +17