Adrian R. Powell

SiC materials-progress, status, and potential roadblocks

Adrian R. Powell, L.B. Rowland · Proceedings of the IEEE · 2002 · 229 citations

Materials Science, Materials Engineering, Electrical Engineering +15

New approach to the growth of low dislocation relaxed SiGe material

Adrian R. Powell, Subramanian S. Iyer, F. K. LeGoues · Applied Physics Letters · 1994 · 181 citations

Engineering, Severe Plastic Deformation, Mechanical Engineering +21

Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry

Thomas E. Tiwald, John A. Woollam, Stefan Zollner et al. · Physical review. B, Condensed matter · 1999 · 163 citations

Optical Materials, Engineering, Spectroscopic Property +22

Si1-x-yGexCy growth and properties of the ternary system

Adrian R. Powell, K. Eberl, B. A. Ek et al. · Journal of Crystal Growth · 1993 · 92 citations

Engineering, Crystal Growth Technology, Applied Physics +2

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Brett Hull, Joseph J. Sumakeris, Michael O’Loughlin et al. · IEEE Transactions on Electron Devices · 2008 · 89 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +11