Brett Hull

High Switching Performance of 1700V, 50A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

Samir Hazra, Ankan De, Lin Cheng et al. · IEEE Transactions on Power Electronics · 2015 · 255 citations

Sic Mosfet, Electrical Engineering, Si Igbt/bimosfet +11

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Arthur F. Witulski, Robert Arslanbekov, Ashok Raman et al. · IEEE Transactions on Nuclear Science · 2017 · 102 citations

Electrical Engineering, Engineering, Physics +11

The next generation of high voltage (10 kV) silicon carbide power modules

Brandon Passmore, Zach Cole, Brad McGee et al. · 2016 · 99 citations

Low-power Electronics, Electrical Engineering, Next Generation +12

Recent progress in SiC DMOSFETs and JBS diodes at Cree

Robert Callanan, Anant Agarwal, Albert A. Burk et al. · 2008 · 94 citations

Engineering, Power Devices, Kv Sic Dmosfets +16

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V<sub>f</sub> Drift in SiC Bipolar Power Devices

Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das et al. · Materials science forum · 2006 · 90 citations

Engineering, Semiconductor Device, Nanoelectronics +17