Joseph J. Sumakeris

Lifetime-limiting defects in n− 4H-SiC epilayers

P. B. Klein, B. V. Shanabrook, S. Huh et al. · Applied Physics Letters · 2006 · 215 citations

Semiconductors, Deep Trap Spectra, Semiconductor Technology +12

Structure of the carrot defect in 4H-SiC epitaxial layers

Mourad Benamara, Xuan Zhang, Marek Skowroński et al. · Applied Physics Letters · 2005 · 94 citations

Materials Engineering, Materials Science, Engineering +7

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V<sub>f</sub> Drift in SiC Bipolar Power Devices

Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das et al. · Materials science forum · 2006 · 90 citations

Engineering, Semiconductor Device, Nanoelectronics +17

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Brett Hull, Joseph J. Sumakeris, Michael O’Loughlin et al. · IEEE Transactions on Electron Devices · 2008 · 89 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +11

Applications of SiC MESFETs and GaN HEMTs in power amplifier design

W.L. Pribble, John W. Palmour, S.T. Sheppard et al. · 2003 · 82 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14