Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Abstract

The forward and reverse bias dc characteristics, the long-term stability under forward and reverse bias, and the reverse recovery performance of 4H-SiC junction barrier Schottky (JBS) diodes that are capable of blocking in excess of 10 kV with forward conduction of up to 10 A at a forward voltage of less than 3.5 V (at 25degC) are described. The diodes show a positive temperature coefficient of resistance and a stable Schottky barrier height of up to 200degC. The diodes show stable operation under continuous forward current injection at 20 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and under continuous reverse bias of 8 kV at 125degC. When switched from a 10-A forward current to a blocking voltage of 3 kV at a current rate-of-fall of 30 A/mus, the reverse recovery time and the reverse recovery charge are nearly constant at 300 ns and 425 nC, respectively, over the entire temperature range of 25degC-175degC.