Eugene A. Imhoff

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Brett Hull, Joseph J. Sumakeris, Michael O’Loughlin et al. · IEEE Transactions on Electron Devices · 2008 · 89 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +11

Frank-Condon approach for optical absorption and resonance Raman scattering in<i>trans</i>-polyacetylene

H. Kuzmany, Eugene A. Imhoff, D. B. Fitchen et al. · Physical review. B, Condensed matter · 1982 · 76 citations

Optical Materials, Engineering, Optical Absorption +16

Resonance Raman spectra of <i>c</i> <i>i</i> <i>s</i> (CH)<i>x</i> and (CD)<i>x</i>

L.S. Lichtmann, Eugene A. Imhoff, A. Sarhangi et al. · The Journal of Chemical Physics · 1984 · 63 citations

Optical Materials, Engineering, Resonance Raman Spectra +20

GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

Kazuki Nomoto, Zhenqi Hu, Bo Song et al. · 2015 · 63 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

Nadeemullah A. Mahadik, Robert E. Stahlbush, Mario G. Ancona et al. · Applied Physics Letters · 2012 · 61 citations

Materials Engineering, Defect Tolerance, Electrical Engineering +13