Robert E. Stahlbush

Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors

Robert E. Stahlbush, Arthur H. Edwards, David L. Griscom et al. · Journal of Applied Physics · 1993 · 182 citations

Post-irradiation Cracking, Engineering, Cracking Sites +19

Bias‐Dependent Etching of Silicon in Aqueous  KOH

O. J. Glembocki, Robert E. Stahlbush, Micha Tomkiewicz · Journal of The Electrochemical Society · 1985 · 138 citations

Engineering, Semiconductor Materials, Integrated Circuits +17

Post-irradiation behavior of the interface state density and the trapped positive charge

Robert E. Stahlbush, B. J. Mrstik, R.K. Lawrence · IEEE Transactions on Nuclear Science · 1990 · 112 citations

Engineering, Physics, Postirradiation Behavior +10

Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

Robert E. Stahlbush, Brenda L. VanMil, R.L. Myers-Ward et al. · Applied Physics Letters · 2009 · 103 citations

Materials Engineering, Semiconductors, Materials Science +13

On the driving force for recombination-induced stacking fault motion in 4H–SiC

Joshua D. Caldwell, Robert E. Stahlbush, Mario G. Ancona et al. · Journal of Applied Physics · 2010 · 98 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15