Brenda L. VanMil - Concepedia

Author

Brenda L. VanMil

United States Naval Research Laboratory ORCID

Also Known As

B. L. VanMil, B. L. Vanmil, B. VanMil, B.L VanMil, B.L. VanMil, Brenda L. VanMil, Brenda L. Vanmil, Brenda VanMil, Brenda Vanmil

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory West Virginia University Pennsylvania State University United States Navy DEVCOM Army Research Laboratory

About

Brenda L. VanMil is an author at United States Naval Research Laboratory specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	29	1.2K
2	Applied Physics	18	28	1.2K
3	Electrical Engineering	12	16	792
4	Natural Sciences	2	2	25
5	Chemistry	2	2	35

Brenda L. VanMil

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates J. S. Moon, Daniel J. Curtis, Ming Hu, IEEE Electron Device Letters SemiconductorsGraphene NanomeshesElectrical EngineeringElectronic DevicesEngineering	2009	373
Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco, Nano Letters	2009	197
Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm Jeong‐Sun Moon, Daniel J. Curtis, S. Bui, IEEE Electron Device Letters SemiconductorsGraphene NanomeshesElectrical EngineeringElectronic DevicesEngineering	2010	146
Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production Glenn G. Jernigan, Brenda L. VanMil, Joseph L. Tedesco, Nano Letters	2009	143
Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions Robert E. Stahlbush, Brenda L. VanMil, R.L. Myers-Ward, Applied Physics Letters Materials EngineeringSemiconductorsMaterials ScienceSemiconductor TechnologyEdge Dislocations	2009	103
Recombination processes controlling the carrier lifetime in n−4H–SiC epilayers with low Z1/2 concentrations P. B. Klein, Rachael L. Myers‐Ward, K.-K. Lew, Journal of Applied Physics Materials ScienceSemiconductor TechnologyEpitaxial GrowthDominant RecombinationEngineering	2010	60
Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC Rachael L. Myers‐Ward, Brenda L. VanMil, Robert E. Stahlbush, Materials science forum EngineeringConversion EfficiencyThin Film Process TechnologyBasal Plane DislocationsEdge Dislocations	2009	52
Basal plane dislocation reduction for 8° off-cut, 4H-SiC using <i>in situ</i> variable temperature growth interruptions Brenda L. VanMil, Robert E. Stahlbush, R.L. Myers-Ward, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringMechanical EngineeringIntegrated CircuitsBasal Plane DislocationsEdge Dislocations	2008	38
Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers Sergey I. Maximenko, Jaime A. Freitas, Rachael L. Myers‐Ward, Journal of Applied Physics Materials ScienceMaterials EngineeringSemiconductor TechnologyEdge DislocationsDiffusion Length	2010	37
4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm Jun Hu, Xiaobin Xin, Xueqing Li, IEEE Transactions on Electron Devices PhotonicsElectrical EngineeringPhotoluminescenceEngineeringPhysics	2008	34

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