Arthur H. Edwards - Concepedia

Author

Arthur H. Edwards

United States Air Force Research Laboratory ORCID

Also Known As

A H Edwards, A. Edwards, A. H. Edwards, A.H Edwards, A.H. EDWARDS, A.H. Edwards, Arthur Edwards, Arthur H Edwards, Arthur H. Edwards

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

United States Air Force Research Laboratory University of North Carolina at Charlotte Sandia National Laboratories Kirtland Air Force Base Arizona State University

About

Arthur H. Edwards is an author at United States Air Force Research Laboratory specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	28	1.5K
2	Applied Physics	17	23	1.2K
3	Natural Sciences	11	11	476
4	Medicine	2	2	133
5	Biochemistry	1	1	121

Arthur H. Edwards

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Electronic structure of intrinsic defects in crystalline germanium telluride Arthur H. Edwards, Andrew C. Pineda, Peter A. Schultz, Physical Review B Materials ScienceEngineeringPhysicsCrystalline DefectsIntrinsic Impurity	2006	234
Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors Robert E. Stahlbush, Arthur H. Edwards, David L. Griscom, Journal of Applied Physics Post-irradiation CrackingEngineeringCracking SitesChemistryCracked H2	1993	182
Asymmetry and long-range character of lattice deformation by neutral oxygen vacancy in α-quartz Peter V. Sushko, Arthur H. Edwards, Alexander L. Shluger, Physical review. B, Condensed matter Materials ScienceMineral PhysicPhotoluminescenceEngineeringLattice Relaxation	2002	136
Mechanisms for radiation dose-rate sensitivity of bipolar transistors Harold P. Hjalmarson, R.L. Pease, S.C. Witczak, IEEE Transactions on Nuclear Science EngineeringRadiation EffectRadiation ExposureRadiation Dose-rate SensitivityBimolecular Mechanisms	2003	121
Reconfigurable Memristive Device Technologies Arthur H. Edwards, Hugh Barnaby, Kristy A. Campbell, Proceedings of the IEEE Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringOxide-based Memristor Technologies	2015	78
Theory of persistent, p-type, metallic conduction in c-GeTe Arthur H. Edwards, Andrew C. Pineda, Peter A. Schultz, Journal of Physics Condensed Matter EngineeringGermanium/tellurium VacancyCharge TransportSemiconductorsIi-vi Semiconductor	2005	67
Semiempirical molecular orbital techniques applied to silicon dioxide: MINDO/3 Arthur H. Edwards, W. Beall Fowler Journal of Physics and Chemistry of Solids Transition Metal ChalcogenidesEngineeringNatural SciencesApplied PhysicsSilicene	1985	65
An Introduction to Reconfigurable Systems James Lyke, Christos G. Christodoulou, G. Alonzo Vera, Proceedings of the IEEE EngineeringReconfigurable ComputingComputer ArchitectureSoftware EngineeringSystem Synthesis	2015	62
Layer intermixing during metal/metal oxide adsorption: Ti/sapphire(0001) Claudio Verdozzi, Peter A. Schultz, Ruqian Wu, Physical review. B, Condensed matter Materials ScienceOxide HeterostructuresTi AdsorptionEngineeringSurface Chemistry	2002	61
Calibration of embedded-cluster method for defect studies in amorphous silica A. S. Mysovsky, Peter V. Sushko, Sanghamitra Mukhopadhyay, Physical Review B Materials ScienceEmbedded-cluster MethodDefect ModelsEngineeringCrystalline Defects	2004	52

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