Alexander L. Shluger

Recommended Methods to Study Resistive Switching Devices

Mario Lanza, H.‐S. Philip Wong, Eric Pop et al. · Advanced Electronic Materials · 2018 · 650 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Vacancy and interstitial defects in hafnia

Adam S. Foster, F. López Gejo, Alexander L. Shluger et al. · Physical review. B, Condensed matter · 2002 · 638 citations · Full text

Natural Sciences, Materials Science, Physics +17

Theories of scanning probe microscopes at the atomic scale

Werner A. Hofer, Adam S. Foster, Alexander L. Shluger · Reviews of Modern Physics · 2003 · 472 citations · Full text

Natural Sciences, Materials Science, Physics +14

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, Dmitry Veksler et al. · Journal of Applied Physics · 2011 · 470 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

Jacob Gavartin, David Muñoz Ramo, Alexander L. Shluger et al. · Applied Physics Letters · 2006 · 344 citations · Full text

Natural Sciences, Materials Science, Physics +12