Recommended Methods to Study Resistive Switching Devices

TLDR

Resistive switching, a property of certain materials, has gained interest for nonvolatile memory devices, and its study varies across prototype cells, experiments, figures of merit, and computational analyses, leading to differing usefulness and impact of findings. The manuscript outlines recommended methodologies for fabricating, characterizing, and simulating RS devices, and aims to help the scientific community assess the usefulness and impact of RS studies for technology development. The manuscript recommends specific fabrication, characterization, and simulation methods for RS devices, and guidance on how to present the resulting data.

Abstract

Abstract Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.