B. J. Mrstik

Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)

S. Y. Tong, A. R. Lubinsky, B. J. Mrstik et al. · Physical review. B, Condensed matter · 1978 · 187 citations

Wide-bandgap Semiconductor, Engineering, Experimental Low-energy-electron-diffraction +21

Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors

Robert E. Stahlbush, Arthur H. Edwards, David L. Griscom et al. · Journal of Applied Physics · 1993 · 182 citations

Post-irradiation Cracking, Engineering, Cracking Sites +19

Post-irradiation behavior of the interface state density and the trapped positive charge

Robert E. Stahlbush, B. J. Mrstik, R.K. Lawrence · IEEE Transactions on Nuclear Science · 1990 · 112 citations

Engineering, Physics, Postirradiation Behavior +10

Impact of annealing-induced compaction on electronic properties of atomic-layer-deposited Al2O3

V. V. Afanas’ev, A. Stesmans, B. J. Mrstik et al. · Applied Physics Letters · 2002 · 99 citations

Materials Engineering, Oxide Heterostructures, Materials Science +15

Si-SiO/sub 2/ interface state generation during X-ray irradiation and during post-irradiation exposure to a hydrogen ambient (MOSFET)

B. J. Mrstik, R. W. Rendell · IEEE Transactions on Nuclear Science · 1991 · 72 citations

Engineering, Radiation Materials Science, Radiation Physics +21