A. Stesmans

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Emilio Scalise, Michel Houssa, Geoffrey Pourtois et al. · Nano Research · 2011 · 679 citations

Classification and control of the origin of photoluminescence from Si nanocrystals

S. Godefroo, M. Hayne, M. Jivanescu et al. · Nature Nanotechnology · 2008 · 512 citations

Photoluminescence, Engineering, Physics +11

Electronic properties of hydrogenated silicene and germanene

Michel Houssa, Emilio Scalise, Kiroubanand Sankaran et al. · Applied Physics Letters · 2011 · 453 citations

Ii-vi Semiconductor, Engineering, Physics +12

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D.P. Brunco, Brice De Jaeger, Geert Eneman et al. · Journal of The Electrochemical Society · 2008 · 263 citations

Materials Science, Dislocation Densities, Electrical Engineering +11

Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

V. V. Afanas’ev, A. Stesmans · Journal of Applied Physics · 2007 · 246 citations

High-κ Insulators, Engineering, Optoelectronic Devices +25