V. V. Afanas’ev - Concepedia

Author

V. V. Afanas’ev

Also Known As

Afanas'ev, V. V., V Afanas’ev, V V Afanas'ev, V V Afanas‘ev, V V Afanas’ev, V. AFANAS’EV, V. Afanas'Ev, V. Afanas'ev, V. Afanasev, V. Afanas’ev

444

Publications

12.1K

Citations

H-Index

109

Concepts

All Affiliations

KU Leuven IMEC University of Antwerp

About

V. V. Afanas’ev is an author at KU Leuven specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	50	175	9K
2	Applied Physics	50	175	9.1K
3	Natural Sciences	17	25	1.5K
4	Chemical Engineering	9	9	369
5	Social Sciences	1	1	28

V. V. Afanas’ev

203

Publications

10.7K

Citations

H-Index

Page 1

	Year	Citations
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 Emilio Scalise, Michel Houssa, Geoffrey Pourtois, Nano Research	2011	679
Intrinsic SiC/SiO2 Interface States V. V. Afanas’ev, Gerhard Pensl, Martin Schulz physica status solidi (a) Materials ScienceSemiconductor TechnologyElectrical EngineeringElectron StatesEngineering	1997	630
Electronic properties of hydrogenated silicene and germanene Michel Houssa, Emilio Scalise, Kiroubanand Sankaran, Applied Physics Letters Ii-vi SemiconductorEngineeringPhysicsNatural SciencesApplied Physics	2011	453
Trap-assisted tunneling in high permittivity gate dielectric stacks Michel Houssa, M. Tuominen, M. Naili, Journal of Applied Physics SemiconductorsTrap-assisted TunnelingElectrical EngineeringSemiconductor TechnologyZro2 Stack	2000	352
High-k dielectrics for future generation memory devices (Invited Paper) J. A. Kittl, Karl Opsomer, M. Popovici, Microelectronic Engineering Electrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsApplied Physics	2009	246
Internal photoemission at interfaces of high-κ insulators with semiconductors and metals V. V. Afanas’ev, A. Stesmans Journal of Applied Physics High-κ InsulatorsEngineeringOptoelectronic DevicesThin Film Process TechnologyElectronic Properties	2007	246
Internal photoemission of electrons and holes from (100)Si into HfO2 V. V. Afanas’ev, A. Stesmans, F. Chen, Applied Physics Letters EngineeringOptoelectronic DevicesSilicon On InsulatorSio2 InterlayersSemiconductor Device	2002	200
Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation V. V. Afanas’ev, A. Stesmans, Florin Ciobanu, Applied Physics Letters Oxide HeterostructuresMaterials ScienceSemiconductor TechnologyDominant Positive EffectEngineering	2003	196
Vibrational properties of silicene and germanene Emilio Scalise, Michel Houssa, Geoffrey Pourtois, Nano Research	2012	160
Band alignment between (100)Si and complex rare earth∕transition metal oxides V. V. Afanas’ev, A. Stesmans, Chao Zhao, Applied Physics Letters Materials EngineeringMaterials ScienceTransition Metal ChalcogenidesEngineeringOxide Electronics	2004	148

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