V. V. Afanas’ev

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Emilio Scalise, Michel Houssa, Geoffrey Pourtois et al. · Nano Research · 2011 · 679 citations

Intrinsic SiC/SiO2 Interface States

V. V. Afanas’ev, Gerhard Pensl, Martin Schulz · physica status solidi (a) · 1997 · 630 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Electronic properties of hydrogenated silicene and germanene

Michel Houssa, Emilio Scalise, Kiroubanand Sankaran et al. · Applied Physics Letters · 2011 · 453 citations

Ii-vi Semiconductor, Engineering, Physics +12

Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa, M. Tuominen, M. Naili et al. · Journal of Applied Physics · 2000 · 352 citations

Semiconductors, Trap-assisted Tunneling, Electrical Engineering +13

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 246 citations

Electrical Engineering, Semiconductor Device, Engineering +7