Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa, M. Tuominen, M. Naili, +4

Journal of Applied Physics

SemiconductorsTrap-assisted TunnelingElectrical EngineeringSemiconductor TechnologyZro2 Stack +11

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

Hiroshi Nohira, Wei‐Bor Tsai, W.F.A. Besling, +8

Journal of Non-Crystalline Solids

Materials ScienceMaterials EngineeringAluminium NitrideEngineeringOxide Electronics +5

Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

C. Perkins, B. B. Triplett, Paul C. McIntyre, +3

Applied Physics Letters

Zro2 DielectricsEngineeringThin Film Process TechnologyZro2 FilmsSemiconductors +16

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Riikka L. Puurunen, Wilfried Vandervorst, W.F.A. Besling, +17

Journal of Applied Physics

Zirconium OxideEngineeringChemical DepositionSilicon On InsulatorSurface Technology +14

Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties

W.F.A. Besling, Edward Young, Thierry Conard, +9

Journal of Non-Crystalline Solids

Materials EngineeringMaterials ScienceElectrical EngineeringStructural PropertiesEngineering +7

Growth of 6H and 4H–SiC by sublimation epitaxy

Mikael Syväjärvi, R. Yakimova, M. Tuominen, +5

Journal of Crystal Growth

Materials ScienceSublimation EpitaxyMaterials EngineeringEngineeringApplied Physics +3

A 3 kV Schottky barrier diode in 4H-SiC

Q. Wahab, T. Kimoto, A. Ellison, +6

Applied Physics Letters

SemiconductorsMetal OverlapElectrical EngineeringElectronic DevicesEngineering +13

Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Wei‐Bor Tsai, R. J. Carter, Hiroshi Nohira, +15

Microelectronic Engineering

Materials ScienceSurface PreparationEngineeringSurface ScienceApplied Physics +7

Characterization of Atomic Layer Deposited WN[sub x]C[sub y] Thin Film as a Diffusion Barrier for Copper Metallization

Soo‐Hyun Kim, Su Suk Oh, Hyun-Mi Kim, +5

Journal of The Electrochemical Society

Crystalline imperfections in 4H SiC grown with a seeded Lely method

M. Tuominen, Rositsa Yakimova, R Glass, +2

Journal of Crystal Growth

Materials EngineeringMaterials ScienceEngineeringApplied PhysicsCarbide +4