M. Tuominen

Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa, M. Tuominen, M. Naili et al. · Journal of Applied Physics · 2000 · 353 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

Hiroshi Nohira, Wei‐Bor Tsai, W.F.A. Besling et al. · Journal of Non-Crystalline Solids · 2002 · 254 citations

Natural Sciences, Materials Engineering, Materials Science +14

Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

C. Perkins, B. B. Triplett, Paul C. McIntyre et al. · Applied Physics Letters · 2001 · 208 citations

Natural Sciences, Materials Engineering, Materials Science +17

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Riikka L. Puurunen, Wilfried Vandervorst, W.F.A. Besling et al. · Journal of Applied Physics · 2004 · 156 citations

Natural Sciences, Materials Engineering, Materials Science +17

Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties

W.F.A. Besling, Edward Young, Thierry Conard et al. · Journal of Non-Crystalline Solids · 2002 · 95 citations

Natural Sciences, Materials Engineering, Materials Science +12