M. Tuominen

Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa, M. Tuominen, M. Naili et al. · Journal of Applied Physics · 2000 · 352 citations

Semiconductors, Trap-assisted Tunneling, Electrical Engineering +13

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

Hiroshi Nohira, Wei‐Bor Tsai, W.F.A. Besling et al. · Journal of Non-Crystalline Solids · 2002 · 249 citations

Materials Science, Materials Engineering, Aluminium Nitride +7

Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

C. Perkins, B. B. Triplett, Paul C. McIntyre et al. · Applied Physics Letters · 2001 · 206 citations

Zro2 Dielectrics, Engineering, Thin Film Process Technology +18

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Riikka L. Puurunen, Wilfried Vandervorst, W.F.A. Besling et al. · Journal of Applied Physics · 2004 · 155 citations

Zirconium Oxide, Engineering, Chemical Deposition +16

Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties

W.F.A. Besling, Edward Young, Thierry Conard et al. · Journal of Non-Crystalline Solids · 2002 · 95 citations

Materials Engineering, Materials Science, Electrical Engineering +9