Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa, M. Tuominen, M. Naili, +4

Journal of Applied Physics

SemiconductorsTrap-assisted TunnelingElectrical EngineeringSemiconductor TechnologyZro2 Stack +11

Charge trapping in very thin high-permittivity gate dielectric layers

Michel Houssa, A. Stesmans, M. Naili, +1

Applied Physics Letters

Materials ScienceElectrical EngineeringSemiconductor DeviceEngineeringStress-induced Leakage Current +9

Effect of O₂post-deposition anneals on the properties of ultra-thin SiO_<i>x</i>/ZrO₂gate dielectric stacks

Michel Houssa, M. Naili, Chao Zhao, +3

Semiconductor Science and Technology

Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringCrystalline Defects +9

Unsupervised GAN-Based Intrusion Detection System Using Temporal Convolutional Networks and Self-Attention

Paulo Freitas de Araujo-Filho, M. Naili, Georges Kaddoum, +2

IEEE Transactions on Network and Service Management

Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks

Zhen Xu, Michel Houssa, Richard Carter, +3

Journal of Applied Physics

Electrical EngineeringDefect GenerationEngineeringSio2 LayerSemiconductor Device +9

Magnetic and structural properties of Co-rich CoFeZr amorphous thin films

G. Suran, M. Naili, H. Niedoba, +3

Journal of Magnetism and Magnetic Materials

Materials ScienceMagnetismFerromagnetismMagnetic PropertiesStructural Properties +11

Induced anisotropy in amorphous Co-Zr-<i>M</i>(<i>M</i>=Zr,Nb,Ti) and Co-Zr-Pt thin films: A magnetic and a structural study

G. Suran, F. Machizaud, M. Naili

Physical review. B, Condensed matter

Magnetic PropertiesEngineeringMagnetic ResonanceThin Film Process TechnologyMagnetic Materials +23

Model for the charge trapping in high permittivity gate dielectric stacks

Michel Houssa, M. Naili, M. M. Heyns, +1

Journal of Applied Physics

Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPhysics +13

In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction

Chao Zhao, Gert Roebben, H. Bender, +7

Microelectronics Reliability

Materials ScienceSitu CrystallisationEngineeringCrystal Growth TechnologyOxide Electronics +5

Induced magnetic anisotropy related to the local atomic order: A study in amorphous Co-Zr and Co-Zr-M thin films

G. Suran, M. Naili, J. Sztern

Journal of Applied Physics

Magnetic PropertiesEngineeringMagnetic ResonanceMagnetic MaterialsLocal Atomic Order +18