Michel Houssa - Concepedia

Author

Michel Houssa

IMEC ORCID

Also Known As

Houssa, M., Houssa, Michel, M Houssa, M. HOUSSA, M. Houssa, MOHAMMED HOUSSA, Michel Houssa, Mohammed Houssa

534

Publications

11.9K

Citations

H-Index

122

Concepts

All Affiliations

IMEC KU Leuven University of Antwerp University of Liège Centre National de la Recherche Scientifique

About

Michel Houssa is an author at IMEC specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	46	159	8.8K
2	Applied Physics	46	157	8K
3	Natural Sciences	16	23	1.2K
4	Chemistry	15	24	1.6K
5	Chemical Engineering	3	3	98

Michel Houssa

192

Publications

10.6K

Citations

H-Index

Page 1

	Year	Citations
Buckled two-dimensional Xene sheets Alessandro Molle, Joshua E. Goldberger, Michel Houssa, Nature Materials EngineeringPhysicsMechanicsTwo-dimensional Xene SheetsContinuum Modeling	2017	795
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 Emilio Scalise, Michel Houssa, Geoffrey Pourtois, Nano Research	2011	679
Electronic properties of hydrogenated silicene and germanene Michel Houssa, Emilio Scalise, Kiroubanand Sankaran, Applied Physics Letters Ii-vi SemiconductorEngineeringPhysicsNatural SciencesApplied Physics	2011	453
Trap-assisted tunneling in high permittivity gate dielectric stacks Michel Houssa, M. Tuominen, M. Naili, Journal of Applied Physics SemiconductorsTrap-assisted TunnelingElectrical EngineeringSemiconductor TechnologyZro2 Stack	2000	352
Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS<sub>2</sub> Surface Daniele Chiappe, Emilio Scalise, Eugenio Cinquanta, Advanced Materials NanosheetEngineeringTwo-dimensional MaterialsElectronic PropertiesChemistry	2013	351
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions Michel Houssa, L. Pantisano, L.-Å. Ragnarsson, Materials Science and Engineering R Reports Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	2006	274
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide Annelies Delabie, Florence Bellenger, Michel Houssa, Applied Physics Letters EngineeringProper PassivationAl2o3 AldSemiconductor DeviceSemiconductors	2007	270
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance D.P. Brunco, Brice De Jaeger, Geert Eneman, Journal of The Electrochemical Society Materials ScienceDislocation DensitiesElectrical EngineeringSemiconductor TechnologyEngineering	2008	263
Can silicon behave like graphene? A first-principles study Michel Houssa, G. Pourtois, V. V. Afanas’ev, Applied Physics Letters Materials ScienceGraphenelike Electronic PropertiesGraphene NanomeshesEngineeringFirst-principles Study	2010	224
Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2 V. V. Afanas’ev, Michel Houssa, A. Stesmans, Journal of Applied Physics Materials ScienceOxide HeterostructuresZro2 LayersEngineeringMetal/al2o3 Contacts	2002	206

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