Electronic properties of hydrogenated silicene and germanene

Michel Houssa, Emilio Scalise, Kiroubanand Sankaran, +3

Applied Physics Letters

Ii-vi SemiconductorEngineeringPhysicsNatural SciencesApplied Physics +10

First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

Sergiu Clima, Y. Y. Chen, R. Degraeve, +6

Applied Physics Letters

Non-volatile MemoryEngineeringResistive Switching MechanismComputational ChemistryChemistry +20

Alternative metals for advanced interconnects

Christoph Adelmann, Liang Wen, Antony Premkumar Peter, +9

Materials ScienceMaterials EngineeringElectrical EngineeringAlternative MetalsTransition Metal Germanides +12

Exploring Alternative Metals to Cu and W for Interconnects Applications Using Automated First-Principles Simulations

Kiroubanand Sankaran, Sergiu Clima, Maarten Mees, +1

ECS Journal of Solid State Science and Technology

EngineeringBulk PropertiesMaterial SimulationElectronic PropertiesInterconnect (Integrated Circuits) +16

Properties of ultrathin molybdenum films for interconnect applications

Valeria Founta, Jean-Philippe Soulié, Kiroubanand Sankaran, +15

Materialia

Materials ScienceEngineeringApplied PhysicsUltrathin Molybdenum FilmsSemiconductor Material +2

Field-driven ultrafast sub-ns programming in W\Al<inf>2</inf>O<inf>3</inf>\Ti\CuTe-based 1T1R CBRAM system

L. Goux, Kiroubanand Sankaran, Gouri Sankar Kar, +14

EngineeringAdvanced ComputingComputer ArchitectureCharge TransportMolecular Dynamics +19

BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

Johan Swerts, S. Mertens, Tianyi Lin, +11

Applied Physics Letters

Magnetic PropertiesFree Layer CapEngineeringMagnetic MaterialsMagnetoresistance +19

Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon

Pierre Eyben, Francesca Clemente, Kris Vanstreels, +9

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

RRAMs based on anionic and cationic switching: a short overview

Sergiu Clima, Kiroubanand Sankaran, Yang Yin Chen, +12

physica status solidi (RRL) - Rapid Research Letters

Non-volatile MemoryEngineeringEmerging Memory TechnologyChemistryPhase Change Memory +16

Modeling of Copper Diffusion in Amorphous Aluminum Oxide in CBRAM Memory Stack

Kiroubanand Sankaran, Ludovic Goux, Sergiu Clima, +6

ECS Transactions

Materials EngineeringMaterials ScienceElectrical EngineeringCopper DiffusionActivation Energy +13