Emilio Scalise

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Emilio Scalise, Michel Houssa, Geoffrey Pourtois et al. · Nano Research · 2011 · 679 citations

Electronic properties of hydrogenated silicene and germanene

Michel Houssa, Emilio Scalise, Kiroubanand Sankaran et al. · Applied Physics Letters · 2011 · 453 citations

Ii-vi Semiconductor, Engineering, Physics +12

Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS₂ Surface

Daniele Chiappe, Emilio Scalise, Eugenio Cinquanta et al. · Advanced Materials · 2013 · 351 citations

Nanosheet, Engineering, Two-dimensional Materials +17

Vibrational properties of silicene and germanene

Emilio Scalise, Michel Houssa, Geoffrey Pourtois et al. · Nano Research · 2012 · 160 citations · Full text

First-principles study of strained 2D MoS2

Emilio Scalise, Michel Houssa, G. Pourtois et al. · Physica E Low-dimensional Systems and Nanostructures · 2012 · 140 citations · Full text

Engineering, Physics, Layered Material +5