G. Pourtois

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Michel Houssa, L. Pantisano, L.-Å. Ragnarsson et al. · Materials Science and Engineering R Reports · 2006 · 274 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +10

Can silicon behave like graphene? A first-principles study

Michel Houssa, G. Pourtois, V. V. Afanas’ev et al. · Applied Physics Letters · 2010 · 224 citations

Materials Science, Graphenelike Electronic Properties, Graphene Nanomeshes +12

First-principles study of strained 2D MoS2

Emilio Scalise, Michel Houssa, G. Pourtois et al. · Physica E Low-dimensional Systems and Nanostructures · 2012 · 140 citations · Full text

Engineering, Physics, Layered Material +5

Electronic properties of two-dimensional hexagonal germanium

Michel Houssa, G. Pourtois, V. V. Afanas’ev et al. · Applied Physics Letters · 2010 · 126 citations

Nanosheet, Engineering, Low Dimensional Material +18

First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf)

Michel Houssa, G. Pourtois, Matty Caymax et al. · Applied Physics Letters · 2008 · 71 citations · Full text

Materials Science, Oxide Heterostructures, Transition Metal Chalcogenides +15