V. V. Afanas’ev - Concepedia

Author

V. V. Afanas’ev

Also Known As

V V Afanas'ev, V. Afanas’Ev, V. V Afanas’ev, V. V. Afanas'ev, V. V. Afanasev, V. V. Afanas’ev, V.V. Afanasev, V.V. Afanase’v, Vasiliy Vladimirovich Afanas’ev, В.В. Афанасьев

Publications

Citations

H-Index

Concepts

All Affiliations

KU Leuven IMEC

About

V. V. Afanas’ev is an author at KU Leuven specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	22	1.7K
2	Applied Physics	16	21	1.7K
3	Natural Sciences	7	7	401
4	Chemistry	7	7	435
5	Chemical Engineering	1	1	12

V. V. Afanas’ev

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Band offsets and electronic structure of SiC/SiO2 interfaces V. V. Afanas’ev, Gerhard Pensl, Max J. Schulz, Journal of Applied Physics Materials ScienceDiamond-like CarbonElectrical EngineeringEngineeringDifferent Sic Polytypes	1996	266
Can silicon behave like graphene? A first-principles study Michel Houssa, G. Pourtois, V. V. Afanas’ev, Applied Physics Letters Materials ScienceGraphenelike Electronic PropertiesGraphene NanomeshesEngineeringFirst-principles Study	2010	224
Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2 V. V. Afanas’ev, Michel Houssa, A. Stesmans, Journal of Applied Physics Materials ScienceOxide HeterostructuresZro2 LayersEngineeringMetal/al2o3 Contacts	2002	206
Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation Michel Houssa, V. V. Afanas’ev, A. Stesmans, Applied Physics Letters SemiconductorsFixed Charge DensityElectrical EngineeringSemiconductor DeviceNegative Fixed Charge	2000	193
Electron spin resonance features of interface defects in thermal (100)Si/SiO2 A. Stesmans, V. V. Afanas’ev Journal of Applied Physics Magnetic PropertiesEngineeringMagnetic ResonanceLine WidthSpintronic Material	1998	178
Shallow electron traps at the 4H–SiC/SiO2 interface V. V. Afanas’ev, A. Stesmans, Gerhard Pensl, Applied Physics Letters High DensitySemiconductor TechnologyElectrical EngineeringElectronic DevicesConduction Band	2000	142
Electronic properties of two-dimensional hexagonal germanium Michel Houssa, G. Pourtois, V. V. Afanas’ev, Applied Physics Letters NanosheetEngineeringLow Dimensional MaterialTwo-dimensional Hexagonal GermaniumElectronic Properties	2010	126
Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2 A. Stesmans, V. V. Afanas’ev Applied Physics Letters EngineeringHydrogen DetachmentChemistrySilicon On InsulatorTrivalent Si	2003	99
Electronic Properties of Silicene: Insights from First-Principles Modeling Michel Houssa, Geoffrey Pourtois, M. M. Heyns, Journal of The Electrochemical Society EngineeringElectronic PropertiesChemistryElectronic StructureGraphene Nanomeshes	2010	47
Energy distribution of the (100)Si/HfO2 interface states Yanina Fedorenko, Linh Truong, V. V. Afanas’ev, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringPhysics	2004	32

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