A. Stesmans

Can silicon behave like graphene? A first-principles study

Michel Houssa, G. Pourtois, V. V. Afanas’ev et al. · Applied Physics Letters · 2010 · 224 citations

Materials Science, Graphenelike Electronic Properties, Graphene Nanomeshes +12

Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

Michel Houssa, V. V. Afanas’ev, A. Stesmans et al. · Applied Physics Letters · 2000 · 193 citations · Full text

Semiconductors, Fixed Charge Density, Electrical Engineering +14

Ternary rare-earth metal oxide high-k layers on silicon oxide

Chao Zhao, T. Witters, Bert Brijs et al. · Applied Physics Letters · 2005 · 133 citations · Full text

Materials Engineering, Semiconductors, Electrical Engineering +11

Electronic properties of two-dimensional hexagonal germanium

Michel Houssa, G. Pourtois, V. V. Afanas’ev et al. · Applied Physics Letters · 2010 · 126 citations

Nanosheet, Engineering, Low Dimensional Material +18

Interaction of Pb defects at the (111)Si/SiO2 interface with molecular hydrogen: Simultaneous action of passivation and dissociation

A. Stesmans · Journal of Applied Physics · 2000 · 111 citations

Engineering, Chemistry, Silicon On Insulator +20