Ternary rare-earth metal oxide high-k layers on silicon oxide

Chao Zhao, T. Witters, Bert Brijs, +8

Applied Physics Letters

Materials EngineeringSemiconductorsElectrical EngineeringMaterials ScienceTernary Oxides +9

Highly reliable TaO<inf>x</inf> ReRAM with centralized filament for 28-nm embedded application

Y. Hayakawa, A. Himeno, Ryo Yasuhara, +17

High Thermal StabilityCell StructureEngineeringEmerging Memory TechnologyComputer Architecture +18

Ovonic Threshold‐Switching Ge_<i>x</i>Se_<i>y</i> Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles

Sergiu Clima, Daniele Garbin, Karl Opsomer, +13

physica status solidi (RRL) - Rapid Research Letters

EngineeringSolid-state ChemistryElectronic StructureCharge TransportTrap Nature +19

Thermally stable integrated Se-based OTS selectors with &gt;20 MA/cm² current drive, &gt;3.10³ half-bias nonlinearity, tunable threshold voltage and excellent endurance

B. Govoreanu, Gabriele Luca Donadio, Karl Opsomer, +13

EngineeringFunctional DevicesIntegrated CircuitsSemiconductor DeviceElectronic Devices +16

Implementation of an industry compliant, 5&amp;#x00D7;50&amp;#x03BC;m, via-middle TSV technology on 300mm wafers

A. Redolfi, Dimitrios Velenis, Sarasvathi Thangaraju, +17

EngineeringSilicon ViasIntegrated CircuitsInterconnect (Integrated Circuits)Cmos Flow +16

Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks

M. Schmidt, Max C. Lemme, H. Kurz, +5

Microelectronic Engineering

Electrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilitySurface Science +7

Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;5&lt;/inf&gt;\Ta RRAM device

L. Goux, A. Fantini, A. Redolfi, +7

Materials EngineeringElectrical EngineeringMemory ArchitectureEngineeringCmos-friendly Rram Stack +11

High-drive current (&amp;#x003E;1MA/cm&lt;sup&gt;2&lt;/sup&gt;) and highly nonlinear (&amp;#x003E;10&lt;sup&gt;3&lt;/sup&gt;) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance

Leqi Zhang, B. Govoreanu, A. Redolfi, +12

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureIntegrated Circuits +18

Direct Evidence of the Overshoot Suppression in Ta&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;5&lt;/sub&gt;-Based Resistive Switching Memory With an Integrated Access Resistor

Yang‐Shun Fan, Leqi Zhang, D. Crotti, +3

IEEE Electron Device Letters

Device Self-capacitance DischargeElectrical EngineeringSet SwitchingEngineeringOvershoot Suppression +8

Highly reliable TaO&lt;inf&gt;x&lt;/inf&gt; ReRAM with centralized filament for 28-nm embedded application

Y. Hayakawa, A. Himeno, Ryo Yasuhara, +17

High Thermal StabilityCell StructureEngineeringEmerging Memory TechnologyComputer Architecture +17