Bert Brijs

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

M. L. Green, M.-Y. Ho, B. Busch et al. · Journal of Applied Physics · 2002 · 279 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 250 citations

Natural Sciences, Materials Engineering, Materials Science +16

Influence of the electron mean free path on the resistivity of thin metal films

W. Zhang, Sywert Brongersma, Bert Brijs et al. · Microelectronic Engineering · 2004 · 232 citations

Natural Sciences, Materials Science, Physics +14

Ternary rare-earth metal oxide high-k layers on silicon oxide

Chao Zhao, T. Witters, Bert Brijs et al. · Applied Physics Letters · 2005 · 133 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Martin M. Frank, Yves J. Chabal, Martin L. Green et al. · Applied Physics Letters · 2003 · 117 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17