Concepedia

M.-Y. Ho

MH

Statistics

Publications

5

Citations

706

H-Index

5

Active since

2002

Affiliations

ASM International(Current)

National University of Singapore

IMEC

Rutgers, The State University of New Jersey

Institute of Materials Research and Engineering

M.-Y. Ho is an author at ASM International specializing in materials engineering, semiconductor device materials, and natural sciences.

Publications per year

2002–2003

5

Publications

5

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

M. L. Green, M.-Y. Ho, B. Busch et al. · Journal of Applied Physics · 2002 · 279 citations

, , +17

Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

M.-Y. Ho, Hao Gong, G. D. Wilk et al. · Journal of Applied Physics · 2003 · 182 citations

, , +17

Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Martin M. Frank, Yves J. Chabal, Martin L. Green et al. · Applied Physics Letters · 2003 · 117 citations · Full text

, , +17

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

M.-Y. Ho, Hao Gong, G. D. Wilk et al. · Applied Physics Letters · 2002 · 103 citations

, , +17

Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing

G. D. Wilk, M.L. Green, M.-Y. Ho et al. · 2003 · 25 citations

, , +17

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