Martin M. Frank - Concepedia

Author

Martin M. Frank

IBM Research - Thomas J. Watson Research Center ORCID

Also Known As

Frank, M., Frank, M. M., Frank, M.M., Frank, Martin, Frank, Martin M., Frank, Martin M. 1972-, M Frank, M M Frank, M. Frank, M. M. Frank

175

Publications

5.4K

Citations

H-Index

104

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Fritz Haber Institute of the Max Planck Society Rutgers, The State University of New Jersey Uppsala University

About

Martin M. Frank is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	38	65	4.6K
2	Applied Physics	32	55	3.9K
3	Natural Sciences	7	7	604
4	Chemical Engineering	7	7	334
5	Social Sciences	1	1	65

Martin M. Frank

Publications

4.9K

Citations

H-Index

Page 1

	Year	Citations
Hf O 2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition Martin M. Frank, G. D. Wilk, D. Starodub, Applied Physics Letters EngineeringThermal TreatmentsSemiconductor DeviceMolecular Beam EpitaxyEpitaxial Growth	2005	312
High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling Sarunya Bangsaruntip, G. M. Cohen, A. Majumdar, EngineeringExcellent Electrostatic ScalingHigh PerformanceSilicon On InsulatorSemiconductor Device	2009	289
Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges E. P. Gusev, Vijay Narayanan, Martin M. Frank IBM Journal of Research and Development EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceAdvanced Packaging (Semiconductors)	2006	270
Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode Catherine Dubourdieu, J. Bruley, Thomas M. Arruda, Nature Nanotechnology Materials ScienceEpitaxial Batio3 FilmsEngineeringFerroelectric ApplicationOxide Electronics	2013	263
Absence of magnetism in hafnium oxide films David W. Abraham, Martin M. Frank, Supratik Guha Applied Physics Letters Magnetic PropertiesEngineeringMagnetic ResonanceMagnetoresistanceMagnetism	2005	215
Germanium channel MOSFETs: Opportunities and challenges Huiling Shang, Martin M. Frank, E. P. Gusev, IBM Journal of Research and Development Germanium Channel MosfetsElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	2006	185
From atoms to crystallites: adsorption on oxide-supported metal particles Martin M. Frank, Marcus Bäumer Physical Chemistry Chemical Physics Materials ScienceAdsorption SitesEngineeringNanoscale ChemistryOxide-supported Metal Particles	2000	168
Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides Martin M. Frank, Yves J. Chabal, G. D. Wilk Applied Physics Letters Materials ScienceSemiconductorsOxide HeterostructuresAl2o3 NucleationGate Dielectrics	2003	163
Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon Nhan V. Nguyen, Albert V. Davydov, D. Chandler‐Horowitz, Applied Physics Letters Optical MaterialsEngineeringHafnium SilicateThin Film Process TechnologyChemical Deposition	2005	153
Synthesis and Characterization of Conjugated Mono- and Dithiol Oligomers and Characterization of Their Self-Assembled Monolayers Bert de Boer, Hong Meng, Dmitrii F. Perepichka, Langmuir Longest Oligothiophenedithiol MoleculeGi-ftir DataEngineeringOrganic ElectronicsMolecular Self-assembly	2003	131

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