G. M. Cohen

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

Sarunya Bangsaruntip, G. M. Cohen, A. Majumdar et al. · 2009 · 289 citations

Engineering, Excellent Electrostatic Scaling, High Performance +16

Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

Sarunya Bangsaruntip, G. M. Cohen, Amlan Majumdar et al. · IEEE Electron Device Letters · 2010 · 193 citations

Device Modeling, Semiconductors, Electrical Engineering +13

Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

K.W. Guarini, Anna W. Topol, M. Ieong et al. · 2003 · 134 citations

Engineering, Device Integration, Computer Architecture +21

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

Sarunya Bangsaruntip, Karthik Balakrishnan, S.-L. Cheng et al. · 2013 · 96 citations

Electrical Engineering, Engineering, Physics +13

Two gates are better than one [double-gate MOSFET process]

P. M. Solomon, K.W. Guarini, Yifan Zhang et al. · IEEE Circuits and Devices Magazine · 2003 · 81 citations

Dense Circuit Layouts, Electrical Engineering, Physical Design (Electronics) +11