Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

Abstract

Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function of <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">EFF</sub> /λ, where <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">EFF</sub> is the effective channel length and λ is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate that <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">EFF</sub> of undoped GAA NW MOSFETs can be scaled down by ~2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control.