Concepedia

Short-channel Effects

Short-Channel Effects is a set of non-ideal electrostatic and carrier-transport phenomena in scaled MOSFETs that arises when the channel length becomes comparable to the source/drain depletion-region dimensions, causing loss of ideal gate control over the channel potential and consequent deviations from long-channel behavior such as threshold-voltage roll-off, drain-induced barrier lowering, velocity saturation, and increased leakage.

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4.9K

Design of ion-implanted MOSFET's with very small physical dimensions

R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu et al. · IEEE Journal of Solid-State Circuits · 1974 · 3.5K citations

, , +16

Tunnel field-effect transistors as energy-efficient electronic switches

Adrian M. Ionescu, Heike Riel · Nature · 2011 · 2.9K citations · Full text

, , +14

Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits

Kaushik Roy, Subhas Chandra Mukhopadhyay, Hamid Mahmoodi · Proceedings of the IEEE · 2003 · 2.3K citations

, , +17

One-dimensional transport and the quantisation of the ballistic resistance

D. Wharam, T. J. Thornton, R. Newbury et al. · Journal of Physics C Solid State Physics · 1988 · 2K citations

, , +17

Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas

T. Sakurai, A. Richard Newton · IEEE Journal of Solid-State Circuits · 1990 · 1.7K citations

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Authors

14.4K

  1. CH
    Chenming Hu

    University of California, Berkeley, United States

    83 publications · 5.2K citations

    38

    h-index

  2. GG
    G. Ghibaudo

    Institut de Microélectronique, Electromagnétisme et Photonique, France

    69 publications · 2.5K citations

    29

    h-index

  3. GG
    G. Groeseneken

    IMEC, Belgium

    44 publications · 2.2K citations

    24

    h-index

  4. KR
    Kaushik Roy

    Purdue University West Lafayette, United States

    30 publications · 3.8K citations

    24

    h-index

  5. SC
    S. Cristoloveanu

    Institut polytechnique de Grenoble, France

    46 publications · 1.4K citations

    22

    h-index

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Institutions

1.6K

  1. University of California, Berkeley

    Berkeley, United States

    54 h-index

    595 publications

    73.8K citations

  2. IBM (United States)

    Armonk, United States

    53 h-index

    909 publications

    60.2K citations

  3. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    45 h-index

    613 publications

    50.9K citations

  4. IMEC

    Leuven, Belgium

    43 h-index

    1K publications

    43.9K citations

  5. Intel (United States)

    Santa Clara, United States

    38 h-index

    347 publications

    31.1K citations

  6. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    37 h-index

    580 publications

    21.5K citations

  7. Toshiba (Japan)

    Tokyo, Japan

    36 h-index

    580 publications

    25.1K citations

  8. Centre National de la Recherche Scientifique

    Paris, France

    36 h-index

    383 publications

    11.7K citations

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  1. IEEE Transactions on Electron Devices

    788 publications · 46.6K citations

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  2. IEEE Electron Device Letters

    381 publications · 18.7K citations

    69

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  3. Solid-State Electronics

    465 publications · 15.3K citations

    56

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  4. IEEE Journal of Solid-State Circuits

    84 publications · 10.4K citations

    38

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  5. IEEE Transactions on Nuclear Science

    94 publications · 4.3K citations

    38

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