Concepedia

Channel Doping Effects

Channel Doping Effects is a semiconductor device physics phenomenon characterized by the intentional modulation of the channel region's doping concentration to mitigate short-channel effects in metal-oxide-semiconductor field-effect transistors by enhancing electrostatic gate control and suppressing drain-induced barrier lowering.

1.2K

Publications

56.8K

Citations

4.8K

Authors

706

Institutions

Publications per year

2017–2026

232

Parents

Publications

1.2K

Design of ion-implanted MOSFET's with very small physical dimensions

R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu et al. · IEEE Journal of Solid-State Circuits · 1974 · 3.5K citations

, , +16

High-Performance Single Layered WSe<sub>2</sub> p-FETs with Chemically Doped Contacts

Hui Fang, Steven S.C. Chuang, Ting Chia Chang et al. · Nano Letters · 2012 · 1.8K citations · Full text

, , +17

Junctionless multigate field-effect transistor

Chi‐Woo Lee, Aryan Afzalian, Nima Dehdashti Akhavan et al. · Applied Physics Letters · 2009 · 925 citations · Full text

, , +16

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

A. Asenov · IEEE Transactions on Electron Devices · 1998 · 636 citations

, , +17

Field-Plated Ga<sub>2</sub>O<sub>3</sub>MOSFETs With a Breakdown Voltage of Over 750 V

Man Hoi Wong, Kohei Sasaki, Akito Kuramata et al. · IEEE Electron Device Letters · 2015 · 529 citations

, , +16

1–5 of 1.2K

Authors

4.8K

  1. CH
    Chenming Hu

    University of California, Berkeley, United States

    16 publications · 1.2K citations

    14

    h-index

  2. DA
    D.A. Antoniadis

    Massachusetts Institute of Technology, United States

    16 publications · 915 citations

    13

    h-index

  3. AK
    Abhinav Kranti

    Indian Institute of Technology Indore, India

    12 publications · 494 citations

    12

    h-index

  4. SC
    S. Cristoloveanu

    Institut polytechnique de Grenoble, France

    13 publications · 582 citations

    11

    h-index

  5. BZ
    Bo Zhang

    University of Electronic Science and Technology of China, China

    12 publications · 284 citations

    11

    h-index

1–5 of 4.8K

Institutions

706

  1. IBM (United States)

    Armonk, United States

    29 h-index

    280 publications

    13.5K citations

  2. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    25 h-index

    176 publications

    10.4K citations

  3. University of California, Berkeley

    Berkeley, United States

    20 h-index

    101 publications

    18.1K citations

  4. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    19 h-index

    114 publications

    3K citations

  5. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    19 h-index

    120 publications

    4K citations

  6. Massachusetts Institute of Technology

    Cambridge, United States

    18 h-index

    74 publications

    4.8K citations

  7. IMEC

    Leuven, Belgium

    18 h-index

    165 publications

    5.2K citations

  8. CEA Grenoble

    Grenoble, France

    18 h-index

    106 publications

    3.4K citations

1–8 of 706

Venues

  1. IEEE Transactions on Electron Devices

    295 publications · 14.7K citations

    61

    h-index

  2. IEEE Electron Device Letters

    166 publications · 9.7K citations

    52

    h-index

  3. Applied Physics Letters

    71 publications · 4K citations

    34

    h-index

  4. Solid-State Electronics

    56 publications · 1.6K citations

    22

    h-index

  5. Superlattices and Microstructures

    25 publications · 706 citations

    19

    h-index

1–5