Applied Physics Letters · 2009 · 925 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDopingField-effect TransistorsIntegrated Circuit DevicesMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsChannel DopingChannel Doping EffectsDoping EffectsElectrical PropertiesElectrical Properties AnalysisFabricationJunction Field-effect TransistorsMetal-semiconductor Field-effect Transistors
This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping. The proposed device is a thin and narrow multigate field-effect transistor, which can be fully depleted and turned off by the gate. Since this device has no junctions, it has simpler fabrication process, less variability, and better electrical properties than classical MOS devices with source and drain PN junctions.
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