F.H. Gaensslen - Concepedia

Author

F.H. Gaensslen

IBM Research - Thomas J. Watson Research Center

Also Known As

F. Gaensslen, F. H. Gaensslen, F.H. Gaensslen, FRITZ H. GAENSSLEN, Fritz H. Gaensslen

Publications

4.8K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Auburn University

About

F.H. Gaensslen is an author at IBM Research - Thomas J. Watson Research Center specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	21	4.6K
2	Electrical Engineering	16	21	4.6K
3	Applied Physics	14	17	4.4K
4	Computer Engineering	2	2	54
5	Education	1	1	31

F.H. Gaensslen

Publications

4.7K

Citations

H-Index

Page 1

	Year	Citations
Design of ion-implanted MOSFET's with very small physical dimensions R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu, IEEE Journal of Solid-State Circuits EngineeringVlsi DesignIntegrated CircuitsPower ElectronicsConventional Mosfet	1974	3.4K
Very small MOSFET's for low-temperature operation F.H. Gaensslen, V.L. Rideout, E.J. Walker, IEEE Transactions on Electron Devices Low-power ElectronicsDevice ModelingElectrical EngineeringRoom TemperatureLow Temperatures	1977	302
Design of Ion-Implanted MOSFET's with Very Small Physical Dimensions R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu, IEEE Solid-State Circuits Society Newsletter Device ModelingLow-power ElectronicsElectrical EngineeringIon ImplantationEngineering	2007	153
Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu, Proceedings of the IEEE Device ModelingLow-power ElectronicsElectrical EngineeringIon ImplantationEngineering	1999	129
Design of micron MOS switching devices R.H. Dennard, F.H. Gaensslen, L. Kuhn, EngineeringSemiconductor MaterialsOptoelectronic DevicesIntegrated CircuitsSemiconductor Device	1972	113
Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behavior R.C. Jaeger, F.H. Gaensslen IEEE Transactions on Electron Devices EngineeringNumerical SolutionMos Device BehaviorNumerical SimulationTransport Phenomena	1980	92
Temperature dependent threshold behavior of depletion mode MOSFETs F.H. Gaensslen, R.C. Jaeger Solid-State Electronics Device ModelingElectrical EngineeringEngineeringBias Temperature InstabilityThermodynamics	1979	80
1 &#181;m MOSFET VLSI technology: Part II&#8212;Device designs and characteristics for high-performance logic applications R.H. Dennard, F.H. Gaensslen, E.J. Walker, IEEE Transactions on Electron Devices	1979	77
Device Design Considerations for Ion Implanted n-Channel MOSFETs V.L. Rideout, F.H. Gaensslen, A. LeBlanc IBM Journal of Research and Development	1975	62
1 /spl mu/m MOSFET VLSI technology. II. Device designs and characteristics for high-performance logic applications R.H. Dennard, F.H. Gaensslen, E.J. Walker, IEEE Journal of Solid-State Circuits Low-power ElectronicsHigh-performance Logic ApplicationsElectrical EngineeringRoom TemperatureEngineering	1979	37

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