V.L. Rideout

Statistics

Publications

Citations

4.8K

H-Index

Active since

1966

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

University of Southern California

IBM (United States)

V.L. Rideout is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, semiconductor devices, and electrical engineering.

Publications per year

1966–1999

Publications

Design of ion-implanted MOSFET's with very small physical dimensions

R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu et al. · IEEE Journal of Solid-State Circuits · 1974 · 3.5K citations

Engineering, Electrical Engineering, Microelectronics +16

Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers

C.R. Crowell, V.L. Rideout · Solid-State Electronics · 1969 · 410 citations

Engineering, Electrical Engineering, Physics +10

Very small MOSFET's for low-temperature operation

F.H. Gaensslen, V.L. Rideout, E.J. Walker et al. · IEEE Transactions on Electron Devices · 1977 · 303 citations

Engineering, Electrical Engineering, Materials Science +13

Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions

R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu et al. · Proceedings of the IEEE · 1999 · 131 citations

Engineering, Electrical Engineering, Microelectronics +16

Effects of image force and tunneling on current transport in metal-semiconductor (Schottky barrier) contacts

V.L. Rideout, C.R. Crowell · Solid-State Electronics · 1970 · 122 citations

Engineering, Electrical Engineering, Materials Science +16

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