Design of micron MOS switching devices

Abstract

Modern photolithographic technology offers the capability of fabricating MOSFET devices of micron dimensions and less. It is by no means obvious that such small devices can be designed with suitable electrical characteristics for LSI switchivg applications. In this talk we will describe short-channel devices ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L_{eff} \sim 1</tex> µ) designed by scaling down larger devices with desirable electrical characteristics. Lateral and vertical dimensions, doping level, and operating voltages and currents are scaled in a self-consistent fashion. In this way small devices have been fabricated without the usual deleterious effects associated with short channels. The measured characteristics of these short-channel devices and the larger devices from which they were scaled will be compared.