H.N. Yu - Concepedia

Author

H.N. Yu

IBM Research - Thomas J. Watson Research Center ORCID

Also Known As

H. N. YU, H. N. Yu, H. Yu, H.N. Yu, How Xuan Yu, Hsin-Ni YU

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (Germany)IBM (United States)

About

H.N. Yu is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	1.1K
2	Applied Physics	11	12	1K
3	Electrical Engineering	10	11	902
4	Natural Sciences	1	1	56
5	Computer Engineering	1	1	10

H.N. Yu

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Emission probability of hot electrons from silicon into silicon dioxide T.H. Ning, C. M. Osburn, H.N. Yu Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesExperimental Method	1977	291
1 &#181;m MOSFET VLSI technology: Part IV&#8212;Hot-electron design constraints T.H. Ning, Peter W. Cook, R.H. Dennard, IEEE Transactions on Electron Devices	1979	247
Optically induced injection of hot electrons into SiO2 T.H. Ning, H.N. Yu Journal of Applied Physics Local Electric FieldOptical MaterialsEngineeringOptoelectronic DevicesIntegrated Circuits	1974	233
Design of micron MOS switching devices R.H. Dennard, F.H. Gaensslen, L. Kuhn, EngineeringSemiconductor MaterialsOptoelectronic DevicesIntegrated CircuitsSemiconductor Device	1972	113
Effect of electron trapping on IGFET characteristics T.H. Ning, C. M. Osburn, H.N. Yu Journal of Electronic Materials EngineeringElectron-beam LithographyPhysicsElectron SpectroscopyApplied Physics	1977	98
Topology of Silicon Structures with Recessed SiO2 E. Bassous, H.N. Yu, V. Maniscalco Journal of The Electrochemical Society EngineeringThermal OxidationIntegrated CircuitsSilicon On InsulatorAdvanced Packaging (Semiconductors)	1976	87
Electron trapping at positively charged centers in SiO2 T.H. Ning, C. M. Osburn, H.N. Yu Applied Physics Letters EngineeringPhysicsNatural SciencesOxide ElectronicsOxide Semiconductors	1975	56
Fabrication of a miniature 8K-bit memory chip using electron-beam exposure H.N. Yu, R.H. Dennard, T. H. P. Chang, Journal of Vacuum Science and Technology Non-volatile MemoryEngineeringMemory ChipElectron-beam LithographyEmerging Memory Technology	1975	48
Threshold instability in IGFET’s due to emission of leakage electrons from silicon substrate into silicon dioxide T.H. Ning, C. M. Osburn, H.N. Yu Applied Physics Letters Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1976	41
Subnanosecond self-aligned I<sup>2</sup>L/MTL circuits D.D. Tang, T.H. Ning, R. Isaac, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringCircuit DesignPhysicsOscillators	1980	30

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