Concepedia

T.H. Ning

TN

Statistics

Publications

89

Citations

4.8K

H-Index

38

Active since

1970

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

IBM (United States)

University of Illinois Urbana-Champaign

T.H. Ning is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, microelectronics, and applied physics.

Top concepts

EngineeringMicroelectronicsElectrical EngineeringApplied PhysicsPhysicsNanoelectronicsIntegrated CircuitsVlsi DesignElectronic EngineeringComputer Engineering

Publications per year

1970–2016

89

Publications

89

Emission probability of hot electrons from silicon into silicon dioxide

T.H. Ning, C. M. Osburn, H.N. Yu · Journal of Applied Physics · 1977 · 291 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interface

C. T. Sah, T.H. Ning, Larry LeRoy Tschopp · Surface Science · 1972 · 263 citations

Engineering, Physics, Surface Oxide Charges +11

1 &#181;m MOSFET VLSI technology: Part IV&#8212;Hot-electron design constraints

T.H. Ning, Peter W. Cook, R.H. Dennard et al. · IEEE Transactions on Electron Devices · 1979 · 247 citations

Optically induced injection of hot electrons into SiO2

T.H. Ning, H.N. Yu · Journal of Applied Physics · 1974 · 233 citations

Local Electric Field, Optical Materials, Engineering +19

Effect of emitter contact on current gain of silicon bipolar devices

T.H. Ning, R. Isaac · IEEE Transactions on Electron Devices · 1980 · 219 citations

Polysilicon Layer, Semiconductor Technology, Electrical Engineering +12

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