C. M. Osburn - Concepedia

Author

C. M. Osburn

Also Known As

C. M. OSBURN, C. M. Osburn, C.M Osburn, C.M. Osburn, Carlton M Osburn, Carlton M. OSBURN, Carlton M. Osburn, Carlton Osburn

130

Publications

3.6K

Citations

H-Index

Concepts

All Affiliations

North Carolina State University MCNC Research and Development Institute IBM Research - Thomas J. Watson Research Center Triangle KTH Royal Institute of Technology

About

C. M. Osburn is an author at North Carolina State University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	35	61	3.1K
2	Applied Physics	33	55	2.9K
3	Chemical Engineering	3	3	99
4	Natural Sciences	1	1	56
5	Biomedical Engineering	1	1	18

C. M. Osburn

Publications

3.5K

Citations

H-Index

Page 1

	Year	Citations
Emission probability of hot electrons from silicon into silicon dioxide T.H. Ning, C. M. Osburn, H.N. Yu Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesExperimental Method	1977	291
1 &#181;m MOSFET VLSI technology: Part IV&#8212;Hot-electron design constraints T.H. Ning, Peter W. Cook, R.H. Dennard, IEEE Transactions on Electron Devices	1979	247
Impact of gate workfunction on device performance at the 50 nm technology node Indranil De, Deepak Johri, A. Srivastava, Solid-State Electronics Hardware SecurityGate WorkfunctionElectrical EngineeringNm Technology NodeEngineering	2000	187
Dielectric Breakdown in Silicon Dioxide Films on Silicon C. M. Osburn, D. W. Ormond Journal of The Electrochemical Society Electrical EngineeringEngineeringCrystalline DefectsSilicon On InsulatorApplied Physics	1972	161
Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon C. M. Osburn, E. Weitzman Journal of The Electrochemical Society EngineeringSilicon On InsulatorCharge TransportSemiconductorsElectrical Conduction	1972	141
Defect structure and electrical properties of NiO—I. High temperature C. M. Osburn, R. W. Vest Journal of Physics and Chemistry of Solids Materials EngineeringMaterials ScienceHigh Temperature MaterialsEngineeringApplied Physics	1971	125
Optimization of the germanium preamorphization conditions for shallow-junction formation Mehmet C. Öztürk, J. J. Wortman, C. M. Osburn, IEEE Transactions on Electron Devices Materials ScienceIon ImplantationEngineeringGermanium Preamorphization ConditionsApplied Physics	1988	116
Dielectric Breakdown in Silicon Dioxide Films on Silicon C. M. Osburn, D. W. Ormond Journal of The Electrochemical Society SemiconductorsMaterials ScienceElectrical EngineeringBreakdown CharacteristicsEngineering	1972	105
Defect annihilation in shallow <i>p</i>+ junctions using titanium silicide D. S. Wen, P. L. Smith, C. M. Osburn, Applied Physics Letters SemiconductorsMaterials ScienceIon ImplantationEngineeringCrystalline Defects	1987	104
Effect of electron trapping on IGFET characteristics T.H. Ning, C. M. Osburn, H.N. Yu Journal of Electronic Materials EngineeringElectron-beam LithographyPhysicsElectron SpectroscopyApplied Physics	1977	98

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