Impact of gate workfunction on device performance at the 50 nm technology node

Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

C. Auth, J.D. Plummer · IEEE Electron Device Letters · 1997 · 563 citations

Engineering, Electrical Engineering, Circuit Theory +14

A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions

M.J. van Dort, P.H. Woerlee, Andrew J. Walker · Solid-State Electronics · 1994 · 273 citations

Engineering, Computer Engineering, Electrical Engineering +17

A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers

Hyo-Seob Shin, A.F. Tasch, C.M. Maziar et al. · IEEE Transactions on Electron Devices · 1989 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's

V.M. Agostinelli, Hyo-Seob Shin, A.F. Tasch · IEEE Transactions on Electron Devices · 1991 · 53 citations

Engineering, Electrical Engineering, Electronic Materials +16

Tungsten Gate Technology for Quarter-Micron Application

H. Noda, Hideyuki Sakiyama, Yasushi Goto et al. · Japanese Journal of Applied Physics · 1996 · 14 citations

Engineering, Electrical Engineering, Materials Science +17