Kohei Sasaki - Concepedia

Author

Kohei Sasaki

National Institute of Information and Communications Technology ORCID

Also Known As

K SASAKI, K Sasaki, K. Sasaki, Kenichi SASAKI, Kohei SASAKI, Kohei Sasaki, Sasaki, K., Sasaki, Kohei, Tomohiro Yamaguchi

279

Publications

14.9K

Citations

H-Index

175

Concepts

All Affiliations

National Institute of Information and Communications Technology Saga University Virginia Tech United States Naval Research Laboratory The University of Tokyo

About

Kohei Sasaki is an author at National Institute of Information and Communications Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	51	88	12.9K
2	Medicine	7	7	262
3	Natural Sciences	7	7	537
4	Health Sciences	2	2	49
5	Public Health	1	1	141

Kohei Sasaki

122

Publications

14.6K

Citations

H-Index

Page 1

	Year	Citations
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesSingle-crystal Gallium Oxide	2012	1.7K
Recent progress in Ga<sub>2</sub>O<sub>3</sub>power devices Masataka Higashiwaki, Kohei Sasaki, Hisashi Murakami, Semiconductor Science and Technology Materials ScienceSemiconductorsElectrical EngineeringReview ArticleEngineering	2016	1.1K
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics Masataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringSingle-crystal Gallium OxideEngineering	2013	696
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy Kohei Sasaki, Akito Kuramata, Takekazu Masui, Applied Physics Express Materials ScienceOxide HeterostructuresElectrical EngineeringEpitaxial GrowthEngineering	2012	594
Development of gallium oxide power devices Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, physica status solidi (a) Wide-bandgap SemiconductorEngineeringPower DevicesPower ElectronicsSemiconductors	2013	559
Field-Plated Ga<sub>2</sub>O<sub>3</sub>MOSFETs With a Breakdown Voltage of Over 750 V Man Hoi Wong, Kohei Sasaki, Akito Kuramata, IEEE Electron Device Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringIon ImplantationEngineering	2015	516
β-Gallium oxide power electronics Andrew J. Green, James S. Speck, Grace Xing, APL Materials Wide-bandgap SemiconductorEngineeringPower Electronic SystemsPower ElectronicsSemiconductors	2022	462
$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates Kohei Sasaki, Masataka Higashiwaki, Akito Kuramata, IEEE Electron Device Letters Materials ScienceSemiconductorsElectrical EngineeringMaterials EngineeringEngineering	2013	431
Homoepitaxial growth of β-Ga<sub>2</sub>O<sub>3</sub>layers by halide vapor phase epitaxy Hisashi Murakami, Kazushiro Nomura, Ken Goto, Applied Physics Express Oxide HeterostructuresMaterials ScienceEngineeringCrystal Growth TechnologySurface Science	2014	384
Correlation between blue luminescence intensity and resistivity in <i>β</i>-Ga2O3 single crystals Takeyoshi Onuma, Shinsuke Fujioka, Tomohiro Yamaguchi, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertyBlue Luminescence Intensity	2013	366

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