Kohei Sasaki

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · Applied Physics Letters · 2012 · 1.7K citations

Materials Science, Semiconductor Technology, Electrical Engineering +12

Recent progress in Ga₂O₃power devices

Masataka Higashiwaki, Kohei Sasaki, Hisashi Murakami et al. · Semiconductor Science and Technology · 2016 · 1.1K citations

Materials Science, Semiconductors, Electrical Engineering +15

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Masataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura et al. · Applied Physics Letters · 2013 · 696 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

Kohei Sasaki, Akito Kuramata, Takekazu Masui et al. · Applied Physics Express · 2012 · 594 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +13

Development of gallium oxide power devices

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · physica status solidi (a) · 2013 · 559 citations

Wide-bandgap Semiconductor, Engineering, Power Devices +16