S. Cristoloveanu - Concepedia

Author

S. Cristoloveanu

Institut polytechnique de Grenoble ORCID

Also Known As

Binhong Li, Cristoloveanu, S., Cristoloveanu, Sorin, Cristoloveanu,, Sorin, In Man Kang, Jae-Hoon Lee, Jong-Bong Ha, M. Arsalan, M. Bawedin, S Cristoloveanu

Publications

12.8K

Citations

H-Index

130

Concepts

All Affiliations

Institut polytechnique de Grenoble Institut de Microélectronique, Electromagnétisme et Photonique Université Grenoble Alpes Centre National de la Recherche Scientifique Commissariat à l'Énergie Atomique et aux Énergies Alternatives

About

S. Cristoloveanu is an author at Institut polytechnique de Grenoble specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	49	243	9.5K
2	Natural Sciences	3	3	55
3	Medicine	2	2	73
4	Business	1	1	37
5	Education	1	1	56

S. Cristoloveanu

267

Publications

9.9K

Citations

H-Index

Page 1

	Year	Citations
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance F. Balestra, S. Cristoloveanu, M. Benachir, IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringNew DeviceNanoelectronics	1987	747
Frontiers of silicon-on-insulator G. K. Celler, S. Cristoloveanu Journal of Applied Physics Soi WafersElectrical EngineeringSemiconductor DeviceEngineeringWafer Scale Processing	2003	676
Ultimately thin double-gate SOI MOSFETs T. Ernst, S. Cristoloveanu, G. Ghibaudo, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringBuried OxidePhysics	2003	244
Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture T. Ernst, C. Tinella, C. Raynaud, Solid-State Electronics Electrical EngineeringEngineeringElectronic EngineeringBias Temperature InstabilitySub-0.1 μM	2002	149
Silicon on insulator technologies and devices: from present to future S. Cristoloveanu Solid-State Electronics Electrical EngineeringInsulator TechnologiesEngineeringSemiconductor DevicePhysics	2001	144
Lateral interband tunneling transistor in silicon-on-insulator C. Aydin, A. Zaslavsky, Serge Luryi, Applied Physics Letters Electrical EngineeringEngineeringPhysicsNanoelectronicsLateral Interband	2004	142
Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects S. Eminente, S. Cristoloveanu, R. Clerc, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsSpecial Charge PropertiesMicroelectronics	2007	136
Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers S. Cristoloveanu, Samuel Williams IEEE Electron Device Letters SemiconductorsPseudo-mos TransistorElectrical EngineeringSemiconductor TechnologyEngineering	1992	134
Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling Jing Wan, C. Le Royer, A. Zaslavsky, Solid-State Electronics Electrical EngineeringEngineeringTunneling MicroscopyPhysicsElectronic Engineering	2011	124
A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration Jing Wan, C. Le Royer, A. Zaslavsky, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringEngineeringMemory DesignFront Gate Capacitor	2011	118

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