S. Cristoloveanu

Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

F. Balestra, S. Cristoloveanu, M. Benachir et al. · IEEE Electron Device Letters · 1987 · 750 citations

Engineering, Electrical Engineering, Materials Science +17

Frontiers of silicon-on-insulator

G. K. Celler, S. Cristoloveanu · Journal of Applied Physics · 2003 · 679 citations

Engineering, Materials Engineering, Materials Science +17

Ultimately thin double-gate SOI MOSFETs

T. Ernst, S. Cristoloveanu, G. Ghibaudo et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations

Engineering, Electrical Engineering, Materials Science +17

Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture

T. Ernst, C. Tinella, C. Raynaud et al. · Solid-State Electronics · 2002 · 149 citations

Engineering, Electrical Engineering, Electronic Materials +15

Lateral interband tunneling transistor in silicon-on-insulator

C. Aydin, A. Zaslavsky, Serge Luryi et al. · Applied Physics Letters · 2004 · 144 citations

Engineering, Electrical Engineering, Materials Science +17