Ultimately thin double-gate SOI MOSFETs

Abstract

The operation of 1-3 nm thick SOI MOSFETs, in double-gate (DG) mode and single-gate (SG) mode (for either front or back channel), is systematically analyzed. Strong interface coupling and threshold voltage variation, a large influence of substrate depletion underneath the buried oxide, the absence of drain current transients, and degradation in electron mobility are typical effects in these ultra-thin MOSFETs. The comparison of SG and DG configurations demonstrates the superiority of DG-MOSFETs: ideal subthreshold swing and remarkably improved transconductance (consistently higher than twice the value in SG-MOSFETs). The experimental data and the difference between SG and DG modes is explained by combining classical models with quantum calculations. The key effect in ultimately thin DG-MOSFETs is volume inversion, which primarily leads to an improvement in mobility, whereas the total inversion charge is only marginally modified.