S. Horiguchi

Fabrication technique for Si single-electron transistoroperating at room temperature

Yasuo Takahashi, Masao Nagase, H. Namatsu et al. · Electronics Letters · 1995 · 335 citations

Engineering, Electrical Engineering, Materials Science +17

Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs

Yasuhisa Ōmura, S. Horiguchi, M. Tabe et al. · IEEE Electron Device Letters · 1993 · 275 citations

Engineering, Electrical Engineering, Physics +13

Ultimately thin double-gate SOI MOSFETs

T. Ernst, S. Cristoloveanu, G. Ghibaudo et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations

Engineering, Electrical Engineering, Materials Science +17

Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si inversion layers

Masanari Shoji, S. Horiguchi · Journal of Applied Physics · 1999 · 123 citations

Engineering, Electrical Engineering, Materials Science +15

Ignitability characteristics of aluminium and magnesium dusts that are generated during the shredding of post-consumer wastes

M. Nifuku, Shigeki Koyanaka, Hitoshi Ohya et al. · Journal of Loss Prevention in the Process Industries · 2007 · 98 citations

Engineering, Materials Engineering, Materials Science +16