S. Horiguchi

Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs

Yasuhisa Ōmura, S. Horiguchi, M. Tabe et al. · IEEE Electron Device Letters · 1993 · 274 citations

Device Modeling, Semiconductors, Electrical Engineering +12

Ultimately thin double-gate SOI MOSFETs

T. Ernst, S. Cristoloveanu, G. Ghibaudo et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations

Device Modeling, Electrical Engineering, Engineering +9

Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si inversion layers

Masanari Shoji, S. Horiguchi · Journal of Applied Physics · 1999 · 123 citations

Semiconductors, Semiconductor Technology, Phonon-limited Electron Mobility +15

Ignitability characteristics of aluminium and magnesium dusts that are generated during the shredding of post-consumer wastes

M. Nifuku, Shigeki Koyanaka, Hitoshi Ohya et al. · Journal of Loss Prevention in the Process Industries · 2007 · 97 citations

Materials Science, Environmental Chemistry, Chemical Engineering +12

Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation

S. Horiguchi, Masao Nagase, Kenji Shiraishi et al. · Japanese Journal of Applied Physics · 2001 · 85 citations

Electrical Engineering, Engineering, Tunneling Microscopy +14