Yasuhisa Ōmura

Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs

Yasuhisa Ōmura, S. Horiguchi, M. Tabe et al. · IEEE Electron Device Letters · 1993 · 274 citations

Device Modeling, Semiconductors, Electrical Engineering +12

0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer

Yasuhisa Ōmura, Satοru Nakashima, K. Izumi et al. · IEEE Transactions on Electron Devices · 1993 · 90 citations

Simox Substrate, Electrical Engineering, Engineering +14

50-nm channel nMOSFET/SIMOX with an ultrathin 2- or 6-nm thick silicon layer and their significant features of operations

Yasuhisa Ōmura, K. Kurihara, Yasuo Takahashi et al. · IEEE Electron Device Letters · 1997 · 61 citations

Electrical Engineering, Significant Features, Engineering +12

0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer

Yasuhisa Ōmura, Satοru Nakashima, K. Izumi et al. · 2002 · 54 citations

Engineering, Vlsi Design, Implanted Oxygen +19

Simox technology and its application to CMOS LSIS

K. Izumi, Yasuhisa Ōmura, T. Sakai · Journal of Electronic Materials · 1983 · 43 citations

Simox Technology, Electrical Engineering, Engineering +6