0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer

Abstract

A 0.1- mu m-gate CMOS/SIMOX is fabricated using high-quality SIMOX substrates with a sub-100-nm-thick buried oxide layer. In addition, 0.085- mu m-gate nMOSFETs/SIMOX and pMOSFETs/SIMOX with 8-nm-thick silicon active layers have been fabricated. The prospects for improving the performance of 0.1- mu m-gate CMOS/SIMOX devices are discussed in detail.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>