0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer

Yasuhisa Ōmura, Satοru Nakashima, K. Izumi, +1

IEEE Transactions on Electron Devices

Simox SubstrateElectrical EngineeringEngineeringNanotechnologyNanoelectronics +12

Spectral encoding and decoding of 10 Gbit/s femtosecondpulses using high resolution arrayed-waveguide grating

Hiroyuki Tsuda, Hirokazu Takenouchi, T. Ishii, +6

Electronics Letters

30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Hideaki Yokoyama, T. Ishii, +3

IEEE Transactions on Electron Devices

Electrical EngineeringTwo-step Recess GateEngineeringRf SemiconductorNanoelectronics +7

Second- and third-order dispersion compensator using a high-resolution arrayed-waveguide grating

Hiroyuki Tsuda, K. Okamoto, T. Ishii, +4

IEEE Photonics Technology Letters

PhotonicsEngineeringOptical Transmission SystemOptical PropertiesDispersion Compensation Scheme +10

Patterning Characteristics of a Chemically-Amplified Negative Resist in Synchrotron Radiation Lithography

Kimiyoshi Deguchi, Kazunori Miyoshi, T. Ishii, +1

Japanese Journal of Applied Physics

Optical MaterialsEngineeringElectron-beam LithographyIntegrated CircuitsResistor +19

0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer

Yasuhisa Ōmura, Satοru Nakashima, K. Izumi, +1

EngineeringVlsi DesignImplanted OxygenUltrathin-film Cmos DevicesIntegrated Circuits +17

30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

Tetsuya Suemitsu, T. Ishii, Haruki Yokoyama, +3

Japanese Journal of Applied Physics

Electrical EngineeringEngineeringGhz Cutoff FrequencyRecord Cutoff FrequencyHigh-frequency Device +9

Nanocomposite resist system

T. Ishii, Hiroshi Nozawa, Toshiaki Tamamura

Applied Physics Letters

EngineeringPolymer NanocompositesCarbon-based MaterialResistorFullerene +15

Application of X-ray mask fabrication technologies to high resolution, large diameter Ta Fresnel zone plates

Akira Ozawa, Toshiaki Tamamura, T. Ishii, +2

Microelectronic Engineering

Materials ScienceHigh ResolutionEngineeringHealth SciencesMicrofabrication +6

30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates

Tetsuya Suemitsu, T. Ishii, Hideaki Yokoyama, +4

Materials ScienceSemiconductor TechnologyElectrical EngineeringSmallest GateEngineering +10