Tetsuya Suemitsu - Concepedia

Author

Tetsuya Suemitsu

Also Known As

Suemitsu, T., Suemitsu, Tetsuya, T Suemitsu, T. SUEMITSU, T. Suemitsu, TETSUYA SUEMITSU, Tet-suya Suemitsu, Tetsuya SUEMITSU, Tetsuya Suemitsu, Tetsuya Suemitsu Tetsuya Suemitsu

254

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

Tohoku University NTT (Japan)NTT (United States)Université de Montpellier Hokkaido University

About

Tetsuya Suemitsu is an author at Tohoku University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	50	1.6K
2	Applied Physics	23	48	1.6K
3	Education	1	1	116
4	Natural Sciences	1	1	22
5	Computer Engineering	1	1	22

Tetsuya Suemitsu

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Yoshihisa Kurita, G. Ducournau, D. Coquillat, Applied Physics Letters Thz PhotonicsTerahertz TechnologyEngineeringTerahertz PhotonicsQuantum Engineering	2014	127
An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation Tetsuya Suemitsu, T. Enoki, Nobuyuki Sano, IEEE Transactions on Electron Devices EngineeringChannel Electron DensityEducationTwo-dimensional Device SimulationSemiconductor Device	1998	116
Optical study of high-biased AlGaN/GaN high-electron-mobility transistors Naoteru Shigekawa, Kenji Shiojima, Tetsuya Suemitsu Journal of Applied Physics Electrical EngineeringEngineeringEl FeaturesPhysicsNanoelectronics	2002	75
30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs Tetsuya Suemitsu, Hideaki Yokoyama, T. Ishii, IEEE Transactions on Electron Devices Electrical EngineeringTwo-step Recess GateEngineeringRf SemiconductorNanoelectronics	2002	73
Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems Taiichi Otsuji, Yahya Moubarak Meziani, Takuya Nishimura, Journal of Physics Condensed Matter PhotonicsPlasmonicsElectrical EngineeringTerahertz SpectroscopyIngap/ingaas/gaas Material Systems	2008	67
High-performance 0.1-μm gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology Tetsuya Suemitsu, Hideaki Yokoyama, Yukio Umeda, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringEngineeringRf SemiconductorFirst Step	1999	58
Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure Niraj Man Shrestha, Yiming Li, Tetsuya Suemitsu, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsSurface Science	2019	57
Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors Naoteru Shigekawa, Kenji Shiojima, Tetsuya Suemitsu Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics	2001	56
Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility Transistors Tetsuya Suemitsu, T. Enoki, Haruki Yokoyama, Japanese Journal of Applied Physics Semiconductor TechnologyElectron DensityElectrical EngineeringEngineeringImproved Recessed-gate Structure	1998	56
30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency Tetsuya Suemitsu, T. Ishii, Haruki Yokoyama, Japanese Journal of Applied Physics Electrical EngineeringEngineeringGhz Cutoff FrequencyRecord Cutoff FrequencyHigh-frequency Device	1999	50

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