Tetsuya Suemitsu

Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Yoshihisa Kurita, G. Ducournau, D. Coquillat et al. · Applied Physics Letters · 2014 · 127 citations · Full text

Thz Photonics, Terahertz Technology, Engineering +17

An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

Tetsuya Suemitsu, T. Enoki, Nobuyuki Sano et al. · IEEE Transactions on Electron Devices · 1998 · 116 citations

Engineering, Channel Electron Density, Education +17

Optical study of high-biased AlGaN/GaN high-electron-mobility transistors

Naoteru Shigekawa, Kenji Shiojima, Tetsuya Suemitsu · Journal of Applied Physics · 2002 · 75 citations

Electrical Engineering, Engineering, El Features +11

30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Hideaki Yokoyama, T. Ishii et al. · IEEE Transactions on Electron Devices · 2002 · 73 citations

Electrical Engineering, Two-step Recess Gate, Engineering +9

Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems

Taiichi Otsuji, Yahya Moubarak Meziani, Takuya Nishimura et al. · Journal of Physics Condensed Matter · 2008 · 67 citations

Photonics, Plasmonics, Electrical Engineering +14