T. Enoki

High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies

K.J. Chen, T. Enoki, K. Maezawa et al. · IEEE Transactions on Electron Devices · 1996 · 133 citations

Materials Science, Materials Engineering, Electrical Engineering +14

A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

Tatsushi Akazaki, Hideaki Takayanagi, Junsaku Nitta et al. · Applied Physics Letters · 1996 · 123 citations

Electrical Engineering, Josephson Junctions, -Type Gate +12

0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

T. Enoki, Masaaki Tomizawa, Yohtaro Umeda et al. · Japanese Journal of Applied Physics · 1994 · 117 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

Tetsuya Suemitsu, T. Enoki, Nobuyuki Sano et al. · IEEE Transactions on Electron Devices · 1998 · 116 citations

Engineering, Channel Electron Density, Education +17

Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel

Tatsushi Akazaki, Kunihiro Arai, T. Enoki et al. · IEEE Electron Device Letters · 1992 · 115 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +11