T. Enoki - Concepedia

Author

T. Enoki

Also Known As

Allera, Enoki, T., Enoki, Takatomo, T Enoki, T. Enoki, TAKATOMO ENOKI, Takatomo ENOKI, Takatomo Enoki, Takatomo Enoki Takatomo Enoki, Tomoya Enoki

259

Publications

Citations

H-Index

Concepts

All Affiliations

NTT (Japan)NTT Basic Research Laboratories NTT (United States)

About

T. Enoki is an author at NTT (Japan) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	87	3K
2	Applied Physics	26	52	2K
3	Education	1	1	116
4	Natural Sciences	1	1	14
5	Chemistry	1	1	14

T. Enoki

102

Publications

3.3K

Citations

H-Index

Page 1

	Year	Citations
High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies K.J. Chen, T. Enoki, K. Maezawa, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringPt-inalas ReactionEngineering	1996	133
A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure Tatsushi Akazaki, Hideaki Takayanagi, Junsaku Nitta, Applied Physics Letters Electrical EngineeringJosephson Junctions-Type GateEngineeringPhysics	1996	123
0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects T. Enoki, Masaaki Tomizawa, Yohtaro Umeda, Japanese Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1994	117
An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation Tetsuya Suemitsu, T. Enoki, Nobuyuki Sano, IEEE Transactions on Electron Devices EngineeringChannel Electron DensityEducationTwo-dimensional Device SimulationSemiconductor Device	1998	116
Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel Tatsushi Akazaki, Kunihiro Arai, T. Enoki, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringIngaas Channel	1992	115
Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs T. Enoki, Haruki Yokoyama, Yohtaro Umeda, Japanese Journal of Applied Physics Electrical EngineeringElectronic DevicesEngineeringHigh-speed ElectronicsHigh-frequency Device	1998	93
Systematic Study of Insulator Deposition Effect (Si<sub>3</sub>N<sub>4</sub>, SiO<sub>2</sub>, AlN, and Al<sub>2</sub>O<sub>3</sub>) on Electrical Properties in AlGaN/GaN Heterostructures Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Japanese Journal of Applied Physics SemiconductorsOxide HeterostructuresElectrical EngineeringMaterials ScienceSystematic Study	2007	74
Design and characteristics of InGaAs/InP composite-channel HFET's T. Enoki, Kunihiro Arai, A. Kohzen, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh-speed Electronics	1995	73
Loss-compensated distributed baseband amplifier IC's for optical transmission systems S. Kimura, Yasuhiko Imai, Yukio Umeda, IEEE Transactions on Microwave Theory and Techniques EngineeringOptical AmplifierBaseband Amplifier IcRf SemiconductorDistributed Baseband Amplifier	1996	73
30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs Tetsuya Suemitsu, Hideaki Yokoyama, T. Ishii, IEEE Transactions on Electron Devices Electrical EngineeringTwo-step Recess GateEngineeringRf SemiconductorNanoelectronics	2002	73

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