K. Maezawa

A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

T. Mizutani, Yutaka Ohno, M. Akita et al. · IEEE Transactions on Electron Devices · 2003 · 243 citations

Engineering, Electrical Engineering, Materials Science +17

Ce- and Yb-based Kondo semiconductors

T. Takabatake, F. Iga, Takashi Yoshino et al. · Journal of Magnetism and Magnetic Materials · 1998 · 161 citations

Engineering, Materials Engineering, Materials Science +11

A New Resonant Tunneling Logic Gate Employing Monostable-Bistable Transition

K. Maezawa, Takashi Mizutani · Japanese Journal of Applied Physics · 1993 · 140 citations

Engineering, Electrical Engineering, Microelectronics +13

Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

Yutaka Ohno, Takeshi Nakao, Shigeru Kishimoto et al. · Applied Physics Letters · 2004 · 137 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices

Kevin J. Chen, K. Maezawa, M. Yamamoto · IEEE Electron Device Letters · 1996 · 136 citations

Engineering, Electrical Engineering, Materials Science +16