IEEE Transactions on Electron Devices · 2003 · 243 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBias Stress EffectsBias Stress InstabilityCollapseCurrent CollapseGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesNitride PassivationSaturation Current
Drain current collapse in AlGaN/GaN HEMTs has been studied systematically by applying bias stress to the device. The collapse was suppressed by light illumination with energy smaller than the bandgap. The position dependence of the light illumination and the measurement of series source and drain resistances revealed that the collapse was caused by the surface states between the gate and drain electrodes, which captured electrons injected from the gate. The current collapse was eliminated by the passivation of the device surface with Si/sub 3/N/sub 4/ film.
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Very-high power density AlGaN/GaN HEMTs
Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 558 citations